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| Defect Passivation for High-Performance PbS Quantum Dot Photodetectors:Experimental Design and Teaching Practice#br#
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| ZHANG Li* ，HAN Zeyao，SUN Bin
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| State Key Laboratory ofFlexible Electronics，Nanjing University of Posts and Telecommunications，Nanjing 210023，China |
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Abstract Driven by the demand for advanced materials and information technologies，the development of high-performance photodetectors is a crucial foundation for technological innovation．PbS quantum dots(QDs)havegarnered significantattention in photodetection due to their size-tunable bandgap，high absorption coefficient，and excellent photoelectric properties．However，their performance is limited by surface defects，which inducenon-radiative carrier recombination，thereby degrading the responsivity，detectivity，and stability of the devices．
Halide passivation has emerged as an effective strategy for mitigating these surface states．To bridge scientific
research and undergraduate education，this study designed a comprehensive experimental project exploring
inorganic halide passivation(using CsI and CsBr)for PbS QDs．The research systematically investigates the
influence of passivation on the film structure，optoelectronic properties of PbS QDs，and the performance of
resulting photodetectors．By integrating theoretical instruction with hands-on experimentation，this project aims
to deepen students＇ understanding of surface engineering in quantum dot materials，equipping them with skills
in material fabrication and device characterization．This approach successfully merges cutting-edge knowledge
with practical skills，effectively enhancing students＇ scientific thinking and innovation capabilities．
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Published: 25 February 2026
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